![]() |
Photoresist Processing | Trouble-Shooting | Etchants and Solvents | ![]() |
![]() |
| Photoresists | Ancillaries | Storage/Handling/Ageing | Substrate Pre-Treatment and Coating | Baking Steps | Exposure | Development | Coating and Lift-off | Etching and Stripping |
| Mechanism | Development Rate and Dark Erosion | Impact of the Softbake | Impact of the Exposure Dose |
| A softbake too long/too hot decomposes a certain fraction of the photo active compound, thus reducing the possible development rate. Hereby, the total dark erosion after development may increase despite a lower dark erosion rate. A good compromise between sufficient solvent evaporation and minimized DNQ-loss is a softbake at 100°C (hotplate) for 1 minute/μm resist film thickness. |
Literature: Exposure and Development |
Introducing new Resists/Processes |
| MicroChemicals® - All you need for microstructuring with short lead times also in small sales volumes:Photoresists (positive, negative, image reversal, thin and
thick resists, spray resists, protective coating ...) Ancillaries ( developers, thinner, adhesion promoter such as HMDS, remover) Etchants (acids and the ready-to-use etching mixtures aluminium etch, chromium etch, gold etch und silicon etch) Solvents (acetone, isopropyl alcohol, MEK ... in VLSI and ULSI quality) |