| With optimized processing, the photo resist applied limits the possible resolution/feature size. Dependant on the film thickness, AZ® photoresists allow a resolution below 0.5 micron. Examples for high-resolution resists are the thin resist AZ® MiR 701, the thick resist AZ® 9260, the image reversal resist AZ® 5214E, and the negative resist AZ® nLOF 2000.The exposure wavelength is far less important for a high resolution than often expected: Comparing g- and i-line, the theoretical resolution changes by less than 10% (relative) when using i-line (365 nm) instead of g-line (435 nm).A good contact between mask and resist film is much more important for attaining optimum resolution results: An undesired "gap" (e.g. by particles/bubbles in the resist film) significantly impacts on the possible feature sizes.A sufficient softbake reduces the remaining solvent concentration in the resist film and therefore the dark erosion during development, which again improves the possible resolution.A developer concentration too high as well as using expired developers (longer necessary development time) reduces the selectivity of the developer which deteriorates the possible resolution of the photoresist. |
Product request: AZ 701MiR high-Resolution thin Resist
Softbake