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Photoresist Processing | Trouble-Shooting | Etchants and Solvents | ![]() |
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| Photoresists | Ancillaries | Storage/Handling/Ageing | Substrate Pre-Treatment and Coating | Baking Steps | Exposure | Development | Coating and Lift-off | Etching and Stripping |
| Developers (Metal Ion Containing) | Developers (Metal Ion Free) | Remover/Stripper | Adhesion Promoter/Thinner/Edge Bead Removal | Compatibilities |
| AZ® 326 MIF is 2.38% TMAH (TetraMethylAmmoniumHydroxide) in H2O. AZ® 726 MIF is 2.38% TMAH in H2O, with additional surfactants for fast and homogenous substrate wetting. AZ® 826 MIF is 2.38% TMAH in H2O, with additional surfactants for fast and homogenous substrate wetting, and further additives for removal of resist residuals sometimes occuring after development. This "scum-remover", causes a slightly higher dark erosion, but is required for development of the photoresists AZ® 4533 and 4562 if metal ion free developers have to be used. |
MIF developers |
Photoresist Development |
Compatibilities (Resists and Developers) |
Development |
| MicroChemicals® - All you need for microstructuring with short lead times also in small sales volumes:Photoresists (positive, negative, image reversal, thin and
thick resists, spray resists, protective coating ...) Ancillaries ( developers, thinner, adhesion promoter such as HMDS, remover) Etchants (acids and the ready-to-use etching mixtures aluminium etch, chromium etch, gold etch und silicon etch) Solvents (acetone, isopropyl alcohol, MEK ... in VLSI and ULSI quality) |